P-Channel MOSFET, 104 A, 20 V, 8-Pin VSON-CLIP Texas Instruments CSD25404Q3T
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
104 A
Maximum Drain Source Voltage
20 V
Package Type
VSON-CLIP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.15V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
96 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Maximum Operating Temperature
+150 °C
Length
3.4mm
Number of Elements per Chip
1
Width
3.4mm
Typical Gate Charge @ Vgs
10.8 nC @ 4.5 V
Height
1.1mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Product details
P-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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BD 0.480
Each (In a Pack of 5) (Exc. Vat)
BD 0.528
Each (In a Pack of 5) (Including VAT)
5
BD 0.480
Each (In a Pack of 5) (Exc. Vat)
BD 0.528
Each (In a Pack of 5) (Including VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 10 | BD 0.480 | BD 2.400 |
15 - 45 | BD 0.380 | BD 1.900 |
50 - 245 | BD 0.335 | BD 1.675 |
250 - 495 | BD 0.295 | BD 1.475 |
500+ | BD 0.265 | BD 1.325 |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
104 A
Maximum Drain Source Voltage
20 V
Package Type
VSON-CLIP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.15V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
96 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Maximum Operating Temperature
+150 °C
Length
3.4mm
Number of Elements per Chip
1
Width
3.4mm
Typical Gate Charge @ Vgs
10.8 nC @ 4.5 V
Height
1.1mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Product details