Texas Instruments NexFET P-Channel MOSFET, 104 A, 20 V, 8-Pin VSON-CLIP CSD25404Q3T
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
104 A
Maximum Drain Source Voltage
20 V
Series
NexFET
Package Type
VSON-CLIP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.15V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
96 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Length
3.4mm
Typical Gate Charge @ Vgs
10.8 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Width
3.4mm
Height
1.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Product details
P-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
BD 3.905
BD 0.781 Each (In a Pack of 5) (Exc. Vat)
BD 4.295
BD 0.859 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 3.905
BD 0.781 Each (In a Pack of 5) (Exc. Vat)
BD 4.295
BD 0.859 Each (In a Pack of 5) (inc. VAT)
Standard
5
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Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 10 | BD 0.781 | BD 3.905 |
| 15 - 45 | BD 0.622 | BD 3.108 |
| 50 - 245 | BD 0.550 | BD 2.750 |
| 250 - 495 | BD 0.490 | BD 2.448 |
| 500+ | BD 0.446 | BD 2.228 |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
104 A
Maximum Drain Source Voltage
20 V
Series
NexFET
Package Type
VSON-CLIP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.15V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
96 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Length
3.4mm
Typical Gate Charge @ Vgs
10.8 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Width
3.4mm
Height
1.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Product details

