Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
12 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
2.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Width
2.2mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
1.15mm
Typical Gate Charge @ Vgs
8.4 nC @ 4.5 V
Height
0.2mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Country of Origin
Philippines
Product details
N-Channel NexFET™ Dual MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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Please check again later.
BD 0.340
Each (On a Reel of 250) (Exc. Vat)
BD 0.374
Each (On a Reel of 250) (Including VAT)
250
BD 0.340
Each (On a Reel of 250) (Exc. Vat)
BD 0.374
Each (On a Reel of 250) (Including VAT)
250
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
250 - 250 | BD 0.340 | BD 85.000 |
500 - 1000 | BD 0.320 | BD 80.000 |
1250+ | BD 0.290 | BD 72.500 |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
12 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
2.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Width
2.2mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
1.15mm
Typical Gate Charge @ Vgs
8.4 nC @ 4.5 V
Height
0.2mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Country of Origin
Philippines
Product details