Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
150 mA
Maximum Collector Emitter Voltage
50 V
Package Type
SOT-346 (SC-59)
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Minimum DC Current Gain
70
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
80 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+125 °C
Dimensions
1.1 x 2.9 x 1.5mm
Country of Origin
Japan
Product details
RF Bipolar Transistors, Toshiba
Bipolar Transistors, Toshiba
BD 0.525
BD 0.052 Each (In a Pack of 10) (Exc. Vat)
BD 0.577
BD 0.057 Each (In a Pack of 10) (inc. VAT)
10
BD 0.525
BD 0.052 Each (In a Pack of 10) (Exc. Vat)
BD 0.577
BD 0.057 Each (In a Pack of 10) (inc. VAT)
10
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
10 - 390 | BD 0.052 | BD 0.525 |
400 - 790 | BD 0.047 | BD 0.472 |
800+ | BD 0.042 | BD 0.420 |
Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
150 mA
Maximum Collector Emitter Voltage
50 V
Package Type
SOT-346 (SC-59)
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Minimum DC Current Gain
70
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
80 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+125 °C
Dimensions
1.1 x 2.9 x 1.5mm
Country of Origin
Japan
Product details