Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
120 V
Package Type
SOT-346 (SC-59)
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
120 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+125 °C
Country of Origin
Japan
Product details
Small Signal NPN Transistors, Toshiba
Bipolar Transistors, Toshiba
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BD 0.100
Each (In a Pack of 25) (Exc. Vat)
BD 0.110
Each (In a Pack of 25) (inc. VAT)
25
BD 0.100
Each (In a Pack of 25) (Exc. Vat)
BD 0.110
Each (In a Pack of 25) (inc. VAT)
25
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
25 - 100 | BD 0.100 | BD 2.500 |
125 - 225 | BD 0.085 | BD 2.125 |
250 - 475 | BD 0.085 | BD 2.125 |
500 - 1225 | BD 0.085 | BD 2.125 |
1250+ | BD 0.085 | BD 2.125 |
Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
120 V
Package Type
SOT-346 (SC-59)
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
120 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+125 °C
Country of Origin
Japan
Product details