Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
120 V
Package Type
SOT-323 (SC-70)
Mounting Type
Surface Mount
Maximum Power Dissipation
100 mW
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+125 °C
Dimensions
2 x 1.25 x 0.9mm
Country of Origin
Japan
Product details
Small Signal NPN Transistors, Toshiba
Bipolar Transistors, Toshiba
BD 3.438
BD 0.138 Each (In a Pack of 25) (Exc. Vat)
BD 3.782
BD 0.152 Each (In a Pack of 25) (inc. VAT)
25
BD 3.438
BD 0.138 Each (In a Pack of 25) (Exc. Vat)
BD 3.782
BD 0.152 Each (In a Pack of 25) (inc. VAT)
25
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
25 - 100 | BD 0.138 | BD 3.438 |
125 - 225 | BD 0.099 | BD 2.475 |
250 - 475 | BD 0.099 | BD 2.475 |
500 - 1225 | BD 0.099 | BD 2.475 |
1250+ | BD 0.099 | BD 2.475 |
Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
120 V
Package Type
SOT-323 (SC-70)
Mounting Type
Surface Mount
Maximum Power Dissipation
100 mW
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+125 °C
Dimensions
2 x 1.25 x 0.9mm
Country of Origin
Japan
Product details