Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
15 A
Maximum Collector Emitter Voltage
230 V
Package Type
TO-3PL
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
230 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
20.5 x 26 x 5.2mm
Country of Origin
China
Product details
NPN Power Transistors, Toshiba
Bipolar Transistors, Toshiba
Stock information temporarily unavailable.
Please check again later.
BD 1.245
Each (In a Pack of 5) (Exc. Vat)
BD 1.369
Each (In a Pack of 5) (inc. VAT)
5
BD 1.245
Each (In a Pack of 5) (Exc. Vat)
BD 1.369
Each (In a Pack of 5) (inc. VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | BD 1.245 | BD 6.225 |
25 - 45 | BD 1.115 | BD 5.575 |
50 - 95 | BD 1.100 | BD 5.500 |
100 - 245 | BD 1.090 | BD 5.450 |
250+ | BD 1.080 | BD 5.400 |
Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
15 A
Maximum Collector Emitter Voltage
230 V
Package Type
TO-3PL
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
230 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
20.5 x 26 x 5.2mm
Country of Origin
China
Product details