Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
15 A
Maximum Collector Emitter Voltage
230 V
Package Type
TO-3PL
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
230 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
20.5 x 26 x 5.2mm
Country of Origin
China
Product details
NPN Power Transistors, Toshiba
Bipolar Transistors, Toshiba
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BD 1.090
Each (In a Pack of 5) (Exc. Vat)
BD 1.199
Each (In a Pack of 5) (Including VAT)
5
BD 1.090
Each (In a Pack of 5) (Exc. Vat)
BD 1.199
Each (In a Pack of 5) (Including VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | BD 1.090 | BD 5.450 |
25 - 45 | BD 0.960 | BD 4.800 |
50 - 95 | BD 0.940 | BD 4.700 |
100 - 245 | BD 0.930 | BD 4.650 |
250+ | BD 0.920 | BD 4.600 |
Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
15 A
Maximum Collector Emitter Voltage
230 V
Package Type
TO-3PL
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
230 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
20.5 x 26 x 5.2mm
Country of Origin
China
Product details