Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
15 A
Maximum Collector Emitter Voltage
230 V
Package Type
TO-3P
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
230 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
15.5 x 4.5 x 20mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
NPN Power Transistors, Toshiba
Bipolar Transistors, Toshiba
BD 4.950
BD 0.990 Each (In a Pack of 5) (Exc. Vat)
BD 5.445
BD 1.089 Each (In a Pack of 5) (inc. VAT)
5
BD 4.950
BD 0.990 Each (In a Pack of 5) (Exc. Vat)
BD 5.445
BD 1.089 Each (In a Pack of 5) (inc. VAT)
5
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | BD 0.990 | BD 4.950 |
| 25 - 45 | BD 0.759 | BD 3.795 |
| 50 - 120 | BD 0.693 | BD 3.465 |
| 125 - 245 | BD 0.649 | BD 3.245 |
| 250+ | BD 0.638 | BD 3.190 |
Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
15 A
Maximum Collector Emitter Voltage
230 V
Package Type
TO-3P
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
230 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
15.5 x 4.5 x 20mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details


