Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
15 A
Maximum Collector Emitter Voltage
230 V
Package Type
TO-3P
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
230 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
15.5 x 4.5 x 20mm
Country of Origin
China
Product details
NPN Power Transistors, Toshiba
Bipolar Transistors, Toshiba
Stock information temporarily unavailable.
Please check again later.
BD 0.945
Each (In a Pack of 5) (Exc. Vat)
BD 1.039
Each (In a Pack of 5) (Including VAT)
5
BD 0.945
Each (In a Pack of 5) (Exc. Vat)
BD 1.039
Each (In a Pack of 5) (Including VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | BD 0.945 | BD 4.725 |
25 - 45 | BD 0.715 | BD 3.575 |
50 - 120 | BD 0.640 | BD 3.200 |
125 - 245 | BD 0.600 | BD 3.000 |
250+ | BD 0.590 | BD 2.950 |
Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
15 A
Maximum Collector Emitter Voltage
230 V
Package Type
TO-3P
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
230 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
15.5 x 4.5 x 20mm
Country of Origin
China
Product details