Technical Document
Specifications
Brand
ToshibaChannel Type
P
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
60 V
Package Type
PW Mold
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
170 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
20 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
15 nC @ 10 V
Number of Elements per Chip
1
Width
5.5mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
6.5mm
Minimum Operating Temperature
-55 °C
Height
2.3mm
Product details
MOSFET P-Channel, 2SJ Series, Toshiba
MOSFET Transistors, Toshiba
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BD 0.295
Each (In a Pack of 10) (Exc. Vat)
BD 0.325
Each (In a Pack of 10) (Including VAT)
10
BD 0.295
Each (In a Pack of 10) (Exc. Vat)
BD 0.325
Each (In a Pack of 10) (Including VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 40 | BD 0.295 | BD 2.950 |
50 - 190 | BD 0.230 | BD 2.300 |
200 - 490 | BD 0.200 | BD 2.000 |
500 - 990 | BD 0.185 | BD 1.850 |
1000+ | BD 0.185 | BD 1.850 |
Technical Document
Specifications
Brand
ToshibaChannel Type
P
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
60 V
Package Type
PW Mold
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
170 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
20 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
15 nC @ 10 V
Number of Elements per Chip
1
Width
5.5mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
6.5mm
Minimum Operating Temperature
-55 °C
Height
2.3mm
Product details