N-Channel MOSFET Transistor, 8 A, 1000 V, 3-Pin TO-3PN Toshiba 2SK1120
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
1000 V
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.8 Ω
Channel Mode
Enhancement
Maximum Power Dissipation
150 W
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
120 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.9mm
Width
4.8mm
Minimum Operating Temperature
-55 °C
Height
19mm
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Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
1000 V
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.8 Ω
Channel Mode
Enhancement
Maximum Power Dissipation
150 W
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
120 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.9mm
Width
4.8mm
Minimum Operating Temperature
-55 °C
Height
19mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products