Toshiba 2SK N-Channel MOSFET, 3 A, 900 V, 3-Pin SC-67 2SK3564,S5Q(J
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
900 V
Series
2SK
Package Type
SC-67
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
17 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Forward Diode Voltage
1.9V
Country of Origin
Malaysia
Product details
MOSFET N-Channel, 2SK Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
BD 2.942
BD 0.588 Each (In a Pack of 5) (Exc. Vat)
BD 3.236
BD 0.647 Each (In a Pack of 5) (inc. VAT)
5
BD 2.942
BD 0.588 Each (In a Pack of 5) (Exc. Vat)
BD 3.236
BD 0.647 Each (In a Pack of 5) (inc. VAT)
5
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | BD 0.588 | BD 2.942 |
| 25 - 45 | BD 0.578 | BD 2.888 |
| 50 - 95 | BD 0.572 | BD 2.860 |
| 100 - 245 | BD 0.566 | BD 2.832 |
| 250+ | BD 0.566 | BD 2.832 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
900 V
Series
2SK
Package Type
SC-67
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
17 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Forward Diode Voltage
1.9V
Country of Origin
Malaysia
Product details
MOSFET N-Channel, 2SK Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products