Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
60 V
Series
2SK
Package Type
PW Mold2
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
20 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
2.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Height
5.5mm
Minimum Operating Temperature
-55 °C
Country of Origin
Japan
Product details
MOSFET N-Channel, 2SK Series, Toshiba
MOSFET Transistors, Toshiba
BD 2.625
BD 0.131 Each (In a Pack of 20) (Exc. Vat)
BD 2.887
BD 0.144 Each (In a Pack of 20) (inc. VAT)
20
BD 2.625
BD 0.131 Each (In a Pack of 20) (Exc. Vat)
BD 2.887
BD 0.144 Each (In a Pack of 20) (inc. VAT)
20
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Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
20 - 40 | BD 0.131 | BD 2.625 |
60 - 100 | BD 0.116 | BD 2.310 |
120 - 220 | BD 0.100 | BD 1.995 |
240 - 460 | BD 0.100 | BD 1.995 |
480+ | BD 0.100 | BD 1.995 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
60 V
Series
2SK
Package Type
PW Mold2
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
20 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
2.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Height
5.5mm
Minimum Operating Temperature
-55 °C
Country of Origin
Japan
Product details