P-Channel MOSFET, 4 A, 30 V, 3-Pin SOT-23 Toshiba SSM3J334R,LF(T
Technical Document
Specifications
Brand
ToshibaChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
136 mΩ
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Width
1.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.9mm
Typical Gate Charge @ Vgs
5.9 nC @ -10 V nC
Height
0.8mm
Country of Origin
Japan
Product details
MOSFET P-Channel, SSM3J Series, Toshiba
MOSFET Transistors, Toshiba
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BD 0.070
Each (In a Pack of 30) (Exc. Vat)
BD 0.077
Each (In a Pack of 30) (inc. VAT)
30
BD 0.070
Each (In a Pack of 30) (Exc. Vat)
BD 0.077
Each (In a Pack of 30) (inc. VAT)
30
Buy in bulk
| quantity | Unit price | Per Pack |
|---|---|---|
| 30 - 120 | BD 0.070 | BD 2.100 |
| 150+ | BD 0.070 | BD 2.100 |
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Technical Document
Specifications
Brand
ToshibaChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
136 mΩ
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Width
1.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.9mm
Typical Gate Charge @ Vgs
5.9 nC @ -10 V nC
Height
0.8mm
Country of Origin
Japan
Product details
MOSFET P-Channel, SSM3J Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products