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Toshiba Dual Silicon N-Channel MOSFET, 300 mA, 60 V, 6-Pin US6 SSM6N7002KFU,LF(T

RS Stock No.: 236-3582Brand: ToshibaManufacturers Part No.: SSM6N7002KFU,LF(T
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

US6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.2e+006 Ω

Maximum Gate Threshold Voltage

2.1V

Number of Elements per Chip

2

Transistor Material

Silicon

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Stock information temporarily unavailable.

BD 7.350

BD 0.037 Each (In a Pack of 200) (Exc. Vat)

BD 8.085

BD 0.041 Each (In a Pack of 200) (inc. VAT)

Toshiba Dual Silicon N-Channel MOSFET, 300 mA, 60 V, 6-Pin US6 SSM6N7002KFU,LF(T
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 200.

Production -

Available in multiples of 200.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

200

Available in multiples of 200
200BD 7.350
400BD 14.700
600BD 22.050
800BD 29.400
1000BD 36.750
1200BD 37.800
1400BD 44.100
1600BD 50.400
1800BD 56.700
2000BD 63.000
2200BD 69.300
2400BD 75.600
2600BD 81.900
2800BD 88.200
3000BD 94.500

BD 7.350

BD 0.037 Each (In a Pack of 200) (Exc. Vat)

BD 8.085

BD 0.041 Each (In a Pack of 200) (inc. VAT)

Toshiba Dual Silicon N-Channel MOSFET, 300 mA, 60 V, 6-Pin US6 SSM6N7002KFU,LF(T
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 200.

Production -

Available in multiples of 200.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

200

Available in multiples of 200
200BD 7.350
400BD 14.700
600BD 22.050
800BD 29.400
1000BD 36.750
1200BD 37.800
1400BD 44.100
1600BD 50.400
1800BD 56.700
2000BD 63.000
2200BD 69.300
2400BD 75.600
2600BD 81.900
2800BD 88.200
3000BD 94.500

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
200 - 200BD 0.037BD 7.350
400 - 600BD 0.037BD 7.350
800 - 1000BD 0.037BD 7.350
1200 - 2800BD 0.032BD 6.300
3000+BD 0.032BD 6.300

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

US6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.2e+006 Ω

Maximum Gate Threshold Voltage

2.1V

Number of Elements per Chip

2

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more