Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.2e+006 Ω
Maximum Gate Threshold Voltage
2.1V
Number of Elements per Chip
1
Transistor Material
Silicon
BD 4.125
BD 0.016 Each (In a Pack of 250) (Exc. Vat)
BD 4.537
BD 0.018 Each (In a Pack of 250) (inc. VAT)
Standard
250
BD 4.125
BD 0.016 Each (In a Pack of 250) (Exc. Vat)
BD 4.537
BD 0.018 Each (In a Pack of 250) (inc. VAT)
Standard
250
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Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 250 - 250 | BD 0.016 | BD 4.125 |
| 500 - 750 | BD 0.016 | BD 4.125 |
| 1000 - 1250 | BD 0.016 | BD 4.125 |
| 1500 - 2750 | BD 0.016 | BD 4.125 |
| 3000+ | BD 0.016 | BD 4.125 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.2e+006 Ω
Maximum Gate Threshold Voltage
2.1V
Number of Elements per Chip
1
Transistor Material
Silicon


