Toshiba TK090A65Z Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220SIS TK090A65Z,S4X(S

RS Stock No.: 206-9723Brand: ToshibaManufacturers Part No.: TK090A65Z,S4X(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

650 V

Series

TK090A65Z

Package Type

TO-220SIS

Pin Count

3

Maximum Drain Source Resistance

0.09 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Silicon

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Stock information temporarily unavailable.

BD 96.525

BD 1.930 Each (In a Tube of 50) (Exc. Vat)

BD 106.177

BD 2.123 Each (In a Tube of 50) (inc. VAT)

Toshiba TK090A65Z Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220SIS TK090A65Z,S4X(S

50

Available in multiples of 50
50BD 96.525
100BD 193.050
150BD 289.575
200BD 386.100
250BD 482.625
300BD 579.150
350BD 675.675
400BD 772.200
450BD 868.725
500BD 965.250
550BD 1,061.775
600BD 1,158.300
650BD 1,254.825
700BD 1,351.350
750BD 1,447.875

BD 96.525

BD 1.930 Each (In a Tube of 50) (Exc. Vat)

BD 106.177

BD 2.123 Each (In a Tube of 50) (inc. VAT)

Toshiba TK090A65Z Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220SIS TK090A65Z,S4X(S
Stock information temporarily unavailable.

50

Available in multiples of 50
50BD 96.525
100BD 193.050
150BD 289.575
200BD 386.100
250BD 482.625
300BD 579.150
350BD 675.675
400BD 772.200
450BD 868.725
500BD 965.250
550BD 1,061.775
600BD 1,158.300
650BD 1,254.825
700BD 1,351.350
750BD 1,447.875

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

650 V

Series

TK090A65Z

Package Type

TO-220SIS

Pin Count

3

Maximum Drain Source Resistance

0.09 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more