Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
650 V
Series
TK090A65Z
Package Type
TO-220SIS
Pin Count
3
Maximum Drain Source Resistance
0.09 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Silicon
BD 6.138
BD 3.069 Each (In a Pack of 2) (Exc. Vat)
BD 6.752
BD 3.376 Each (In a Pack of 2) (inc. VAT)
2
BD 6.138
BD 3.069 Each (In a Pack of 2) (Exc. Vat)
BD 6.752
BD 3.376 Each (In a Pack of 2) (inc. VAT)
2
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 8 | BD 3.069 | BD 6.138 |
| 10 - 18 | BD 2.387 | BD 4.774 |
| 20 - 24 | BD 2.338 | BD 4.675 |
| 26 - 48 | BD 2.167 | BD 4.334 |
| 50+ | BD 1.996 | BD 3.993 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
650 V
Series
TK090A65Z
Package Type
TO-220SIS
Pin Count
3
Maximum Drain Source Resistance
0.09 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Silicon


