Technical Document
Specifications
Brand
ToshibaMaximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220SIS
Maximum Drain Source Resistance
3,8 mΩ
Maximum Power Dissipation
45 W
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
140 nC při 10 V
Country of Origin
China
Product details
MOSFET Transistors, Toshiba
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BD 1.395
Each (Supplied in a Bag) (Exc. Vat)
BD 1.535
Each (Supplied in a Bag) (Including VAT)
2
BD 1.395
Each (Supplied in a Bag) (Exc. Vat)
BD 1.535
Each (Supplied in a Bag) (Including VAT)
2
Buy in bulk
quantity | Unit price | Per Bag |
---|---|---|
2 - 18 | BD 1.395 | BD 2.790 |
20 - 38 | BD 1.230 | BD 2.460 |
40 - 98 | BD 1.075 | BD 2.150 |
100 - 498 | BD 1.005 | BD 2.010 |
500+ | BD 0.950 | BD 1.900 |
Technical Document
Specifications
Brand
ToshibaMaximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220SIS
Maximum Drain Source Resistance
3,8 mΩ
Maximum Power Dissipation
45 W
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
140 nC při 10 V
Country of Origin
China
Product details