MOSFET Transistor Toshiba TK100A10N1,S4X(S

RS Stock No.: 827-6094PBrand: ToshibaManufacturers Part No.: TK100A10N1,S4X(S
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Technical Document

Specifications

Brand

Toshiba

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220SIS

Maximum Drain Source Resistance

3,8 mΩ

Maximum Power Dissipation

45 W

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

140 nC při 10 V

Country of Origin

China

Product details

MOSFET Transistors, Toshiba

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BD 1.395

Each (Supplied in a Bag) (Exc. Vat)

BD 1.535

Each (Supplied in a Bag) (Including VAT)

MOSFET Transistor Toshiba TK100A10N1,S4X(S
Select packaging type

BD 1.395

Each (Supplied in a Bag) (Exc. Vat)

BD 1.535

Each (Supplied in a Bag) (Including VAT)

MOSFET Transistor Toshiba TK100A10N1,S4X(S
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Bag
2 - 18BD 1.395BD 2.790
20 - 38BD 1.230BD 2.460
40 - 98BD 1.075BD 2.150
100 - 498BD 1.005BD 2.010
500+BD 0.950BD 1.900

Ideate. Create. Collaborate

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Technical Document

Specifications

Brand

Toshiba

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220SIS

Maximum Drain Source Resistance

3,8 mΩ

Maximum Power Dissipation

45 W

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

140 nC při 10 V

Country of Origin

China

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more