Toshiba TK N-Channel MOSFET, 214 A, 80 V, 3-Pin TO-220 TK100E08N1
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
214 A
Maximum Drain Source Voltage
80 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
255 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15.1mm
Product details
MOSFET Transistors, Toshiba
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BD 1.518
BD 1.518 Each (Exc. Vat)
BD 1.670
BD 1.670 Each (inc. VAT)
Standard
1
BD 1.518
BD 1.518 Each (Exc. Vat)
BD 1.670
BD 1.670 Each (inc. VAT)
Standard
1
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| quantity | Unit price |
|---|---|
| 1 - 9 | BD 1.518 |
| 10 - 19 | BD 1.441 |
| 20 - 49 | BD 1.370 |
| 50 - 249 | BD 1.221 |
| 250+ | BD 1.160 |
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Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
214 A
Maximum Drain Source Voltage
80 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
255 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15.1mm
Product details
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products