Toshiba DTMOSIV N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS TK10A60W,S4VX(M

Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
9.7 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220SIS
Series
DTMOSIV
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
30 W
Maximum Gate Source Voltage
-30 V, +30 V
Length
10mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.5mm
Forward Diode Voltage
1.7V
Height
15mm
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
BD 2.750
BD 0.550 Each (In a Pack of 5) (Exc. Vat)
BD 3.025
BD 0.605 Each (In a Pack of 5) (inc. VAT)
5
BD 2.750
BD 0.550 Each (In a Pack of 5) (Exc. Vat)
BD 3.025
BD 0.605 Each (In a Pack of 5) (inc. VAT)
5
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Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | BD 0.550 | BD 2.750 |
| 25 - 45 | BD 0.363 | BD 1.815 |
| 50 - 120 | BD 0.358 | BD 1.788 |
| 125 - 245 | BD 0.358 | BD 1.788 |
| 250+ | BD 0.352 | BD 1.760 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
9.7 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220SIS
Series
DTMOSIV
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
30 W
Maximum Gate Source Voltage
-30 V, +30 V
Length
10mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.5mm
Forward Diode Voltage
1.7V
Height
15mm
Country of Origin
Japan
Product details

