Toshiba U-MOSVIII-H N-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK TK15S04N1L,LQ(O

RS Stock No.: 133-2798Brand: ToshibaManufacturers Part No.: TK15S04N1L,LQ(O
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

15 A

Maximum Drain Source Voltage

40 V

Series

U-MOSVIII-H

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

37 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

46 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

5.5mm

Length

6.5mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Forward Diode Voltage

1.2V

Height

2.3mm

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

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Stock information temporarily unavailable.

BD 2.228

BD 0.446 Each (In a Pack of 5) (Exc. Vat)

BD 2.451

BD 0.491 Each (In a Pack of 5) (inc. VAT)

Toshiba U-MOSVIII-H N-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK TK15S04N1L,LQ(O
Select packaging type

BD 2.228

BD 0.446 Each (In a Pack of 5) (Exc. Vat)

BD 2.451

BD 0.491 Each (In a Pack of 5) (inc. VAT)

Toshiba U-MOSVIII-H N-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK TK15S04N1L,LQ(O
Stock information temporarily unavailable.
Select packaging type

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QuantityUnit pricePer Pack
5 - 20BD 0.446BD 2.228
25 - 45BD 0.380BD 1.898
50 - 245BD 0.368BD 1.842
250 - 495BD 0.358BD 1.788
500+BD 0.352BD 1.760

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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

15 A

Maximum Drain Source Voltage

40 V

Series

U-MOSVIII-H

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

37 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

46 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

5.5mm

Length

6.5mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Forward Diode Voltage

1.2V

Height

2.3mm

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more