Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
165 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.02mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.94mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20.95mm
Forward Diode Voltage
1.7V
Country of Origin
China
Product details
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
BD 2.167
BD 1.084 Each (In a Pack of 2) (Exc. Vat)
BD 2.384
BD 1.192 Each (In a Pack of 2) (inc. VAT)
2
BD 2.167
BD 1.084 Each (In a Pack of 2) (Exc. Vat)
BD 2.384
BD 1.192 Each (In a Pack of 2) (inc. VAT)
2
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Pack |
---|---|---|
2 - 8 | BD 1.084 | BD 2.167 |
10 - 38 | BD 0.952 | BD 1.903 |
40 - 98 | BD 0.836 | BD 1.672 |
100 - 198 | BD 0.786 | BD 1.573 |
200+ | BD 0.754 | BD 1.507 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
165 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.02mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.94mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20.95mm
Forward Diode Voltage
1.7V
Country of Origin
China
Product details