Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
600 V
Series
DTMOSIV
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
45 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10mm
Typical Gate Charge @ Vgs
40 nC @ 10 V
Transistor Material
Si
Height
15mm
Forward Diode Voltage
1.7V
Country of Origin
Japan
Product details
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
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BD 5.100
BD 1.020 Each (In a Pack of 5) (Exc. Vat)
BD 5.610
BD 1.122 Each (In a Pack of 5) (inc. VAT)
5
BD 5.100
BD 1.020 Each (In a Pack of 5) (Exc. Vat)
BD 5.610
BD 1.122 Each (In a Pack of 5) (inc. VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | BD 1.020 | BD 5.100 |
25 - 45 | BD 0.870 | BD 4.350 |
50+ | BD 0.815 | BD 4.075 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
600 V
Series
DTMOSIV
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
45 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10mm
Typical Gate Charge @ Vgs
40 nC @ 10 V
Transistor Material
Si
Height
15mm
Forward Diode Voltage
1.7V
Country of Origin
Japan
Product details