Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220SIS
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10mm
Typical Gate Charge @ Vgs
16 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Height
15mm
Country of Origin
China
Product details
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
BD 4.180
BD 0.418 Each (In a Pack of 10) (Exc. Vat)
BD 4.598
BD 0.460 Each (In a Pack of 10) (inc. VAT)
10
BD 4.180
BD 0.418 Each (In a Pack of 10) (Exc. Vat)
BD 4.598
BD 0.460 Each (In a Pack of 10) (inc. VAT)
10
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 90 | BD 0.418 | BD 4.180 |
| 100 - 190 | BD 0.352 | BD 3.520 |
| 200 - 360 | BD 0.319 | BD 3.190 |
| 370 - 740 | BD 0.314 | BD 3.135 |
| 750+ | BD 0.314 | BD 3.135 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220SIS
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10mm
Typical Gate Charge @ Vgs
16 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Height
15mm
Country of Origin
China
Product details


