Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
88 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
10.16mm
Typical Gate Charge @ Vgs
86 nC @ 10 V
Number of Elements per Chip
1
Width
4.45mm
Height
15.1mm
Country of Origin
China
Product details
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
BD 84.975
BD 1.700 Each (In a Tube of 50) (Exc. Vat)
BD 93.473
BD 1.870 Each (In a Tube of 50) (inc. VAT)
50
BD 84.975
BD 1.700 Each (In a Tube of 50) (Exc. Vat)
BD 93.473
BD 1.870 Each (In a Tube of 50) (inc. VAT)
50
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tube |
---|---|---|
50 - 200 | BD 1.700 | BD 84.975 |
250 - 450 | BD 1.529 | BD 76.450 |
500+ | BD 1.397 | BD 69.850 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
88 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
10.16mm
Typical Gate Charge @ Vgs
86 nC @ 10 V
Number of Elements per Chip
1
Width
4.45mm
Height
15.1mm
Country of Origin
China
Product details