Toshiba N-Channel MOSFET, 90 A, 100 V, 3-Pin TO-220 TK40E10N1,S1X(S
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
100 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
126 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
49 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15.1mm
Country of Origin
China
Product details
MOSFET Transistors, Toshiba
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BD 3.412
BD 0.682 Each (In a Pack of 5) (Exc. Vat)
BD 3.753
BD 0.750 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 3.412
BD 0.682 Each (In a Pack of 5) (Exc. Vat)
BD 3.753
BD 0.750 Each (In a Pack of 5) (inc. VAT)
Standard
5
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Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
100 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
126 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
49 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15.1mm
Country of Origin
China
Product details
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products