Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
72 A
Maximum Drain Source Voltage
120 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
225 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.45mm
Height
15.1mm
Country of Origin
China
Product details
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
BD 3.602
BD 0.720 Each (In a Pack of 5) (Exc. Vat)
BD 3.962
BD 0.792 Each (In a Pack of 5) (inc. VAT)
5
BD 3.602
BD 0.720 Each (In a Pack of 5) (Exc. Vat)
BD 3.962
BD 0.792 Each (In a Pack of 5) (inc. VAT)
5
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | BD 0.720 | BD 3.602 |
| 25 - 45 | BD 0.638 | BD 3.190 |
| 50 - 95 | BD 0.561 | BD 2.805 |
| 100 - 245 | BD 0.534 | BD 2.668 |
| 250+ | BD 0.512 | BD 2.558 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
72 A
Maximum Drain Source Voltage
120 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
225 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.45mm
Height
15.1mm
Country of Origin
China
Product details


