Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
30 V
Series
U-MOSVIII-H
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
12.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
5mm
Typical Gate Charge @ Vgs
9.8 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
5mm
Forward Diode Voltage
1.2V
Height
0.95mm
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
BD 3.850
BD 0.192 Each (In a Pack of 20) (Exc. Vat)
BD 4.235
BD 0.211 Each (In a Pack of 20) (inc. VAT)
20
BD 3.850
BD 0.192 Each (In a Pack of 20) (Exc. Vat)
BD 4.235
BD 0.211 Each (In a Pack of 20) (inc. VAT)
20
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 20 - 80 | BD 0.192 | BD 3.850 |
| 100 - 180 | BD 0.182 | BD 3.630 |
| 200 - 980 | BD 0.176 | BD 3.520 |
| 1000 - 1980 | BD 0.176 | BD 3.520 |
| 2000+ | BD 0.176 | BD 3.520 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
30 V
Series
U-MOSVIII-H
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
12.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
5mm
Typical Gate Charge @ Vgs
9.8 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
5mm
Forward Diode Voltage
1.2V
Height
0.95mm
Country of Origin
Japan
Product details


