Technical Document
Specifications
Brand
ToshibaTransistor Type
PNP
Maximum DC Collector Current
-12 A
Maximum Collector Emitter Voltage
-80 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
120
Transistor Configuration
Single
Maximum Collector Base Voltage
-80 V
Maximum Emitter Base Voltage
-6 V
Maximum Operating Frequency
50 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10 x 4.5 x 15mm
Maximum Operating Temperature
+150 °C
Country of Origin
Japan
Product details
PNP Power Transistors, Toshiba
Bipolar Transistors, Toshiba
BD 3.520
BD 0.704 Each (In a Pack of 5) (Exc. Vat)
BD 3.872
BD 0.774 Each (In a Pack of 5) (inc. VAT)
5
BD 3.520
BD 0.704 Each (In a Pack of 5) (Exc. Vat)
BD 3.872
BD 0.774 Each (In a Pack of 5) (inc. VAT)
5
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | BD 0.704 | BD 3.520 |
| 25+ | BD 0.600 | BD 2.998 |
Technical Document
Specifications
Brand
ToshibaTransistor Type
PNP
Maximum DC Collector Current
-12 A
Maximum Collector Emitter Voltage
-80 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
120
Transistor Configuration
Single
Maximum Collector Base Voltage
-80 V
Maximum Emitter Base Voltage
-6 V
Maximum Operating Frequency
50 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10 x 4.5 x 15mm
Maximum Operating Temperature
+150 °C
Country of Origin
Japan
Product details


