Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
30 V
Package Type
1212
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Length
3.15mm
Typical Gate Charge @ Vgs
39 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Width
3.15mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Minimum Operating Temperature
-55 °C
Height
1.07mm
Country of Origin
China
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BD 0.115
Each (On a Reel of 3000) (Exc. Vat)
BD 0.127
Each (On a Reel of 3000) (Including VAT)
3000
BD 0.115
Each (On a Reel of 3000) (Exc. Vat)
BD 0.127
Each (On a Reel of 3000) (Including VAT)
3000
Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
30 V
Package Type
1212
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Length
3.15mm
Typical Gate Charge @ Vgs
39 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Width
3.15mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Minimum Operating Temperature
-55 °C
Height
1.07mm
Country of Origin
China