Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
186 nC @ 10 V
Width
2.38mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
6.22mm
Country of Origin
Taiwan, Province Of China
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BD 5.350
BD 0.535 Each (In a Pack of 10) (Exc. Vat)
BD 5.885
BD 0.589 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 5.350
BD 0.535 Each (In a Pack of 10) (Exc. Vat)
BD 5.885
BD 0.589 Each (In a Pack of 10) (inc. VAT)
Standard
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | BD 0.535 | BD 5.350 |
100 - 490 | BD 0.455 | BD 4.550 |
500 - 990 | BD 0.400 | BD 4.000 |
1000+ | BD 0.355 | BD 3.550 |
Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
186 nC @ 10 V
Width
2.38mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
6.22mm
Country of Origin
Taiwan, Province Of China