Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 6 A, 60 V, 8-Pin PowerPAK 1212-8 SQS966ENW-T1_GE3

RS Stock No.: 178-3727Brand: Vishay SiliconixManufacturers Part No.: SQS966ENW-T1_GE3
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Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

60 V

Package Type

PowerPAK 1212-8

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

27.8 W

Maximum Gate Source Voltage

±20 V

Length

3.15mm

Typical Gate Charge @ Vgs

6.2 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

2

Width

3.15mm

Height

1.07mm

Automotive Standard

AEC-Q101

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Country of Origin

China

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Stock information temporarily unavailable.

BD 544.500

BD 0.182 Each (On a Reel of 3000) (Exc. Vat)

BD 598.950

BD 0.200 Each (On a Reel of 3000) (inc. VAT)

Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 6 A, 60 V, 8-Pin PowerPAK 1212-8 SQS966ENW-T1_GE3

3000

Available in multiples of 3000
3000BD 544.500
6000BD 1,089.000
9000BD 1,633.500
12000BD 2,178.000
15000BD 2,722.500
18000BD 3,267.000
21000BD 3,811.500
24000BD 4,356.000
27000BD 4,900.500
30000BD 5,445.000
33000BD 5,989.500
36000BD 6,534.000
39000BD 7,078.500
42000BD 7,623.000
45000BD 8,167.500

BD 544.500

BD 0.182 Each (On a Reel of 3000) (Exc. Vat)

BD 598.950

BD 0.200 Each (On a Reel of 3000) (inc. VAT)

Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 6 A, 60 V, 8-Pin PowerPAK 1212-8 SQS966ENW-T1_GE3
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000BD 544.500
6000BD 1,089.000
9000BD 1,633.500
12000BD 2,178.000
15000BD 2,722.500
18000BD 3,267.000
21000BD 3,811.500
24000BD 4,356.000
27000BD 4,900.500
30000BD 5,445.000
33000BD 5,989.500
36000BD 6,534.000
39000BD 7,078.500
42000BD 7,623.000
45000BD 8,167.500

Stock information temporarily unavailable.

Please check again later.

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

60 V

Package Type

PowerPAK 1212-8

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

27.8 W

Maximum Gate Source Voltage

±20 V

Length

3.15mm

Typical Gate Charge @ Vgs

6.2 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

2

Width

3.15mm

Height

1.07mm

Automotive Standard

AEC-Q101

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more