Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.6 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
43 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.41mm
Width
4.7mm
Transistor Material
Si
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
9.01mm
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
BD 0.585
Each (In a Pack of 10) (Exc. Vat)
BD 0.643
Each (In a Pack of 10) (Including VAT)
10
BD 0.585
Each (In a Pack of 10) (Exc. Vat)
BD 0.643
Each (In a Pack of 10) (Including VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | BD 0.585 | BD 5.850 |
100 - 240 | BD 0.440 | BD 4.400 |
250 - 490 | BD 0.360 | BD 3.600 |
500 - 990 | BD 0.325 | BD 3.250 |
1000+ | BD 0.240 | BD 2.400 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.6 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
43 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.41mm
Width
4.7mm
Transistor Material
Si
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
9.01mm
Product details