Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
100 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
8.7 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.41mm
Width
9.65mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
4.83mm
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Stock information temporarily unavailable.
BD 3.905
BD 0.781 Each (In a Pack of 5) (Exc. Vat)
BD 4.295
BD 0.859 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 3.905
BD 0.781 Each (In a Pack of 5) (Exc. Vat)
BD 4.295
BD 0.859 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 45 | BD 0.781 | BD 3.905 |
| 50 - 120 | BD 0.732 | BD 3.658 |
| 125 - 245 | BD 0.671 | BD 3.355 |
| 250 - 495 | BD 0.638 | BD 3.190 |
| 500+ | BD 0.610 | BD 3.052 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
100 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
8.7 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.41mm
Width
9.65mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
4.83mm
Product details


