Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
18 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.41mm
Width
4.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.01mm
Country of Origin
China
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
BD 0.670
Each (Supplied in a Tube) (Exc. Vat)
BD 0.737
Each (Supplied in a Tube) (Including VAT)
10
BD 0.670
Each (Supplied in a Tube) (Exc. Vat)
BD 0.737
Each (Supplied in a Tube) (Including VAT)
10
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
10 - 40 | BD 0.670 | BD 6.700 |
50 - 90 | BD 0.660 | BD 6.600 |
100 - 240 | BD 0.570 | BD 5.700 |
250 - 490 | BD 0.545 | BD 5.450 |
500+ | BD 0.455 | BD 4.550 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
18 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.41mm
Width
4.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.01mm
Country of Origin
China
Product details