Vishay P-Channel MOSFET, 6.8 A, 100 V, 3-Pin TO-220AB IRF9520PBF

RS Stock No.: 708-5140Brand: VishayManufacturers Part No.: IRF9520PBFDistrelec Article No.: 17115241
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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6.8 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.41mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

18 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Height

9.01mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

BD 5.665

BD 0.566 Each (In a Pack of 10) (Exc. Vat)

BD 6.231

BD 0.623 Each (In a Pack of 10) (inc. VAT)

Vishay P-Channel MOSFET, 6.8 A, 100 V, 3-Pin TO-220AB IRF9520PBF
Select packaging type

BD 5.665

BD 0.566 Each (In a Pack of 10) (Exc. Vat)

BD 6.231

BD 0.623 Each (In a Pack of 10) (inc. VAT)

Vishay P-Channel MOSFET, 6.8 A, 100 V, 3-Pin TO-220AB IRF9520PBF
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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QuantityUnit pricePer Pack
10 - 40BD 0.566BD 5.665
50 - 90BD 0.561BD 5.610
100 - 240BD 0.495BD 4.950
250 - 490BD 0.478BD 4.785
500+BD 0.396BD 3.960

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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6.8 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.41mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

18 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Height

9.01mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more