Vishay Single 1 Type P-Channel Power MOSFET, 6.8 A, 100 V TO-263 IRF9520SPBF
Technical Document
Specifications
Brand
VishayProduct Type
Power MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
6.8A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-263
Mount Type
Surface
Maximum Drain Source Resistance Rds
0.6Ω
Maximum Power Dissipation Pd
60W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
18nC
Maximum Operating Temperature
175°C
Transistor Configuration
Single
Width
10.67 mm
Length
9.65mm
Standards/Approvals
RoHS 2002/95/EC, IEC 61249-2-21
Number of Elements per Chip
1
Automotive Standard
No
Country of Origin
China
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Stock information temporarily unavailable.
BD 29.425
BD 0.588 Each (In a Tube of 50) (Exc. Vat)
BD 32.367
BD 0.647 Each (In a Tube of 50) (inc. VAT)
50
BD 29.425
BD 0.588 Each (In a Tube of 50) (Exc. Vat)
BD 32.367
BD 0.647 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
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Technical Document
Specifications
Brand
VishayProduct Type
Power MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
6.8A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-263
Mount Type
Surface
Maximum Drain Source Resistance Rds
0.6Ω
Maximum Power Dissipation Pd
60W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
18nC
Maximum Operating Temperature
175°C
Transistor Configuration
Single
Width
10.67 mm
Length
9.65mm
Standards/Approvals
RoHS 2002/95/EC, IEC 61249-2-21
Number of Elements per Chip
1
Automotive Standard
No
Country of Origin
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products