Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
200 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.67mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
9.65mm
Transistor Material
Si
Height
4.83mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 9.405
BD 0.940 Each (In a Pack of 10) (Exc. Vat)
BD 10.345
BD 1.034 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 9.405
BD 0.940 Each (In a Pack of 10) (Exc. Vat)
BD 10.345
BD 1.034 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 10 | BD 0.940 | BD 9.405 |
| 20 - 40 | BD 0.770 | BD 7.700 |
| 50 - 90 | BD 0.726 | BD 7.260 |
| 100 - 240 | BD 0.710 | BD 7.095 |
| 250+ | BD 0.682 | BD 6.820 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
200 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.67mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
9.65mm
Transistor Material
Si
Height
4.83mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


