Vishay P-Channel MOSFET, 4.7 A, 60 V, 3-Pin TO-220AB IRF9Z10PBF

RS Stock No.: 815-2679Brand: VishayManufacturers Part No.: IRF9Z10PBF
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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

4.7 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

43 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Width

4.65mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.51mm

Typical Gate Charge @ Vgs

12 nC @ 10 V

Height

15.49mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

BD 6.875

BD 0.688 Each (In a Pack of 10) (Exc. Vat)

BD 7.563

BD 0.757 Each (In a Pack of 10) (inc. VAT)

Vishay P-Channel MOSFET, 4.7 A, 60 V, 3-Pin TO-220AB IRF9Z10PBF
Select packaging type

BD 6.875

BD 0.688 Each (In a Pack of 10) (Exc. Vat)

BD 7.563

BD 0.757 Each (In a Pack of 10) (inc. VAT)

Vishay P-Channel MOSFET, 4.7 A, 60 V, 3-Pin TO-220AB IRF9Z10PBF
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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QuantityUnit pricePer Pack
10 - 90BD 0.688BD 6.875
100 - 240BD 0.522BD 5.225
250 - 490BD 0.490BD 4.895
500 - 990BD 0.429BD 4.290
1000+BD 0.380BD 3.795

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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

4.7 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

43 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Width

4.65mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.51mm

Typical Gate Charge @ Vgs

12 nC @ 10 V

Height

15.49mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more