Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.7 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
43 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Width
4.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.51mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Height
15.49mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 6.875
BD 0.688 Each (In a Pack of 10) (Exc. Vat)
BD 7.563
BD 0.757 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 6.875
BD 0.688 Each (In a Pack of 10) (Exc. Vat)
BD 7.563
BD 0.757 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 90 | BD 0.688 | BD 6.875 |
| 100 - 240 | BD 0.522 | BD 5.225 |
| 250 - 490 | BD 0.490 | BD 4.895 |
| 500 - 990 | BD 0.429 | BD 4.290 |
| 1000+ | BD 0.380 | BD 3.795 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.7 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
43 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Width
4.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.51mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Height
15.49mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


