Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.7 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
43 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
12 nC @ 10 V
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 0.539
BD 0.539 Each (Exc. Vat)
BD 0.593
BD 0.593 Each (inc. VAT)
Standard
1
BD 0.539
BD 0.539 Each (Exc. Vat)
BD 0.593
BD 0.593 Each (inc. VAT)
Standard
1
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price |
|---|---|
| 1 - 9 | BD 0.539 |
| 10 - 49 | BD 0.484 |
| 50 - 99 | BD 0.429 |
| 100 - 249 | BD 0.402 |
| 250+ | BD 0.385 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.7 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
43 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
12 nC @ 10 V
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details


