Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
88 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
34 nC @ 10 V
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 4.648
BD 0.930 Each (In a Pack of 5) (Exc. Vat)
BD 5.113
BD 1.023 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 4.648
BD 0.930 Each (In a Pack of 5) (Exc. Vat)
BD 5.113
BD 1.023 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 45 | BD 0.930 | BD 4.648 |
| 50 - 120 | BD 0.836 | BD 4.180 |
| 125 - 245 | BD 0.748 | BD 3.740 |
| 250 - 495 | BD 0.710 | BD 3.548 |
| 500+ | BD 0.671 | BD 3.355 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
88 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
34 nC @ 10 V
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details


