Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.7 A
Maximum Drain Source Voltage
900 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
38 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 0.803
BD 0.803 Each (Exc. Vat)
BD 0.883
BD 0.883 Each (inc. VAT)
Standard
1
BD 0.803
BD 0.803 Each (Exc. Vat)
BD 0.883
BD 0.883 Each (inc. VAT)
Standard
1
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price |
|---|---|
| 1 - 9 | BD 0.803 |
| 10 - 49 | BD 0.566 |
| 50 - 99 | BD 0.500 |
| 100 - 249 | BD 0.462 |
| 250+ | BD 0.424 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.7 A
Maximum Drain Source Voltage
900 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
38 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details


