Vishay N-Channel MOSFET, 3.1 A, 1000 V, 3-Pin TO-220AB IRFBG30PBF

Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
1000 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
80 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 1.238
BD 1.238 Each (Exc. Vat)
BD 1.362
BD 1.362 Each (inc. VAT)
Standard
1
BD 1.238
BD 1.238 Each (Exc. Vat)
BD 1.362
BD 1.362 Each (inc. VAT)
Standard
1
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quantity | Unit price |
---|---|
1 - 9 | BD 1.238 |
10 - 49 | BD 1.116 |
50 - 99 | BD 1.084 |
100 - 249 | BD 1.040 |
250+ | BD 0.990 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
1000 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
80 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details