Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.6 A
Maximum Drain Source Voltage
60 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.29mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
3.37mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
6.3V
Country of Origin
Philippines
Product details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 6.765
BD 0.676 Each (In a Pack of 10) (Exc. Vat)
BD 7.441
BD 0.744 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 6.765
BD 0.676 Each (In a Pack of 10) (Exc. Vat)
BD 7.441
BD 0.744 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | BD 0.676 | BD 6.765 |
100 - 240 | BD 0.660 | BD 6.600 |
250 - 490 | BD 0.578 | BD 5.775 |
500 - 990 | BD 0.561 | BD 5.610 |
1000+ | BD 0.462 | BD 4.620 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.6 A
Maximum Drain Source Voltage
60 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.29mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
3.37mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
6.3V
Country of Origin
Philippines
Product details