Vishay N-Channel MOSFET, 4.5 A, 100 V, 3-Pin TO-220FP IRFI510GPBF

RS Stock No.: 815-2702Brand: VishayManufacturers Part No.: IRFI510GPBF
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.5 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

27 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.83mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.63mm

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

16.12mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

BD 4.180

BD 0.418 Each (In a Pack of 10) (Exc. Vat)

BD 4.598

BD 0.460 Each (In a Pack of 10) (inc. VAT)

Vishay N-Channel MOSFET, 4.5 A, 100 V, 3-Pin TO-220FP IRFI510GPBF
Select packaging type

BD 4.180

BD 0.418 Each (In a Pack of 10) (Exc. Vat)

BD 4.598

BD 0.460 Each (In a Pack of 10) (inc. VAT)

Vishay N-Channel MOSFET, 4.5 A, 100 V, 3-Pin TO-220FP IRFI510GPBF
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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QuantityUnit pricePer Pack
10 - 90BD 0.418BD 4.180
100 - 490BD 0.396BD 3.960
500 - 990BD 0.363BD 3.630
1000 - 2490BD 0.346BD 3.465
2500+BD 0.330BD 3.300

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.5 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

27 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.83mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.63mm

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

16.12mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more