Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
37 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.63mm
Typical Gate Charge @ Vgs
16 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4.83mm
Transistor Material
Si
Height
16.12mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 6.435
BD 0.644 Each (In a Pack of 10) (Exc. Vat)
BD 7.079
BD 0.708 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 6.435
BD 0.644 Each (In a Pack of 10) (Exc. Vat)
BD 7.079
BD 0.708 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 90 | BD 0.644 | BD 6.435 |
| 100 - 240 | BD 0.605 | BD 6.050 |
| 250 - 490 | BD 0.544 | BD 5.445 |
| 500 - 990 | BD 0.522 | BD 5.225 |
| 1000+ | BD 0.490 | BD 4.895 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
37 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.63mm
Typical Gate Charge @ Vgs
16 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4.83mm
Transistor Material
Si
Height
16.12mm
Minimum Operating Temperature
-55 °C
Product details


