Vishay N-Channel MOSFET, 4 A, 200 V, 3-Pin TO-220FP IRFI620GPBF
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Typical Gate Charge @ Vgs
16 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
BD 4.510
BD 0.902 Each (In a Pack of 5) (Exc. Vat)
BD 4.961
BD 0.992 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 4.510
BD 0.902 Each (In a Pack of 5) (Exc. Vat)
BD 4.961
BD 0.992 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 45 | BD 0.902 | BD 4.510 |
| 50 - 120 | BD 0.764 | BD 3.822 |
| 125 - 245 | BD 0.720 | BD 3.602 |
| 250 - 495 | BD 0.682 | BD 3.410 |
| 500+ | BD 0.600 | BD 2.998 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Typical Gate Charge @ Vgs
16 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products