Vishay N-Channel MOSFET, 5.9 A, 200 V, 3-Pin TO-220FP IRFI630GPBF
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.9 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
43 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
9.8mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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BD 0.688
BD 0.688 Each (Exc. Vat)
BD 0.757
BD 0.757 Each (inc. VAT)
Standard
1
BD 0.688
BD 0.688 Each (Exc. Vat)
BD 0.757
BD 0.757 Each (inc. VAT)
Standard
1
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| Quantity | Unit price |
|---|---|
| 1 - 9 | BD 0.688 |
| 10 - 49 | BD 0.616 |
| 50 - 99 | BD 0.588 |
| 100 - 249 | BD 0.550 |
| 250+ | BD 0.534 |
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Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.9 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
43 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
9.8mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products