Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.63mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
16.12mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 5.885
BD 0.588 Each (In a Pack of 10) (Exc. Vat)
BD 6.473
BD 0.647 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 5.885
BD 0.588 Each (In a Pack of 10) (Exc. Vat)
BD 6.473
BD 0.647 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 40 | BD 0.588 | BD 5.885 |
| 50 - 90 | BD 0.550 | BD 5.500 |
| 100 - 240 | BD 0.500 | BD 5.005 |
| 250 - 490 | BD 0.478 | BD 4.785 |
| 500+ | BD 0.456 | BD 4.565 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.63mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
16.12mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


