Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
41 A
Maximum Drain Source Voltage
100 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Width
5.31mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
20.82mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 7.948
BD 1.590 Each (In a Pack of 5) (Exc. Vat)
BD 8.743
BD 1.749 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 7.948
BD 1.590 Each (In a Pack of 5) (Exc. Vat)
BD 8.743
BD 1.749 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | BD 1.590 | BD 7.948 |
| 25 - 45 | BD 1.348 | BD 6.738 |
| 50 - 120 | BD 1.270 | BD 6.352 |
| 125 - 245 | BD 1.210 | BD 6.050 |
| 250+ | BD 1.067 | BD 5.335 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
41 A
Maximum Drain Source Voltage
100 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Width
5.31mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
20.82mm
Minimum Operating Temperature
-55 °C
Product details


